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SANYO HIT Power® N Series to be a “Hit” Item and Topic at Solar 2009 in Buffalo

Hands-on training, booth exhibits all show the industry is ready to grow
Buffalo, NY, May 11, 2009
Source: Sanyo press release

SANYO Energy (U.S.A.) Corporation, a subsidiary of SANYO Electric Co., Ltd. (SANYO), a leading company for energy and environment, announces its display of its latest HIT Power® N Series and HIT® Double bifacial panels in booth number 1910 at the ASES SOLAR 2009 conference, scheduled from May 11 to May 16 at the Buffalo-Niagara Convention Center. Along with the trade show, there will be a special business training event called “SOLAR SUCCESS!” where SANYO will be offering a complete 2-hour hands-on training workshop on the latest products and technology, focusing on the N Series and HIT® Double on May 14.

“Because the business training event is the largest of its kind, SANYO will be able to educate a large number of people through hands-on product training on the benefits of our highly efficient solar panels,” explains Yoshinori Kaido, Vice President of SANYO Energy USA. “Furthermore, with our displays of the new HIT Power® N Series and the bifacial HIT® Double at the adjoined trade show, we should be able to raise awareness of our efficient solar panels, and the maturity of the solar industry to the visitors of the show.”

The combination trade show and training event is the single largest, most comprehensive training opportunity for the solar industry in North America. With more than 200 exhibits and NABCEP accredited courses, the goals of the show and training are to meet the demand for holistic strategy, offer usable tools and market insights, and promote hands-on training with the opportunity to see systems on display at the show, while making key contacts within the solar industry.

About HIT®
HIT® stands for Heterojunction with Intrinsic Thin-layer. HIT® solar cells developed by SANYO are hybrid solar cells composed of single crystalline silicon wafers surrounded by ultra-thin amorphous silicon layers. The unique structure minimizes defects within the p/n junction of the cell, producing highly efficient cells capable of achieving up to 17.1% module efficiency while producing more power even at higher temperatures.